Temperature-tuned band gap characteristics of InSe layered semiconductor single crystals

Isik M., Gasanly N.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.107, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 107
  • Publication Date: 2020
  • Doi Number: 10.1016/j.mssp.2019.104862
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Keywords: InSe, Band gap energy, Optical properties, Temperature dependency, OPTICAL-PROPERTIES, DEPENDENCE, PHOTOLUMINESCENCE
  • Middle East Technical University Affiliated: Yes

Abstract

Layered structured InSe has attracted remarkable attention due to its effective characteristics utilized especially in optoelectronic device technology. This point directs researchers to investigate optical properties of InSe in great detail. The temperature dependent band gap characteristics of InSe and analyses performed on this dependency have been rarely studied in literature. Here, temperature-dependent transmission and room temperature reflection experiments were performed on InSe layered single crystals. The band gap energy was found around 1.22 eV at room temperature and 1.32 eV at 10 K. The temperature-gap energy dependency was analyzed using Varshni and O'Donnell-Chen models to reveal various optical parameters of the crystal. The structural characteristics; crystalline parameters like lattice constants, lattice strain, dislocation density and atomic compositions of InSe were also determined from the analyses of XRD and EDS measurements.