Charge carrier traps in as-grown TIGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TIGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 x 10(-26) cm(2) and 2.0 x 10(14) cm(-3), respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution. (C) 2009 Elsevier B.V. All rights reserved.