Optical properties of TlInS2 layered single crystals near the absorption edge

Qasrawi A. F. , Gasanly N.

JOURNAL OF MATERIALS SCIENCE, vol.41, no.11, pp.3569-3572, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 11
  • Publication Date: 2006
  • Doi Number: 10.1007/s10853-005-5618-0
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE
  • Page Numbers: pp.3569-3572

Abstract

The sample thickness effect on the optical properties of TlInS2 layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10-3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16-1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 mu m. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 mu m. (c) 2006 Springer Science + Business Media, Inc.