Trapping centers in Bi12TiO20 single crystals by thermally stimulated current

Isik M., Delice S., HASANLI N., Darvishov N., Bagiev V.

Optical Materials, vol.122, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 122
  • Publication Date: 2021
  • Doi Number: 10.1016/j.optmat.2021.111797
  • Journal Name: Optical Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Computer & Applied Sciences, INSPEC
  • Keywords: Bi12TiO20, Sillenites, Defects, TSC, Impurities, BI12MO20 M, TLINS2, SI, TI, GE
  • Middle East Technical University Affiliated: Yes


© 2021 Elsevier B.V.Sillenite group compounds have been widely utilized in photocatalytic applications. One of the member of this group, Bi12TiO20 single crystal, was grown by Czochralski method. The structural properties were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. XRD pattern presented well-defined intensive peaks associated with cubic crystalline structure. SEM images indicated the crystal surface as almost uniform and smooth. Thermally stimulated current (TSC) experiments were performed in the 10–280 K temperature range to reveal shallow trapping centers in the Bi12TiO20 single crystal. Two peaks around 112 and 179 K were observed in the TSC glow curve. The analyses of these curves considering the curve fitting and peak shape techniques resulted in presence of two hole centers at 0.09 and 0.14 eV. Heating rate dependencies of peak maximum temperature and current were also investigated throughout the paper.