Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals

IŞIK M., Gasanly N.

PHYSICA B-CONDENSED MATTER, cilt.421, ss.53-56, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 421
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.physb.2013.04.015
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.53-56
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga0.75In0.25Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10 eV. Current voltage characteristics showed that both ohmic and SCL characters exhibit in 180-300 K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11 eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150-300 K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga0.75In0.25Se crystals in literature. (C) 2013 Elsevier B.V. All rights reserved.