Synthesis and temperature-tuned band gap characteristics of magnetron sputtered ZnTe thin films

Isik M., Gullu H. H., PARLAK M., Gasanly N.

PHYSICA B-CONDENSED MATTER, cilt.582, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 582
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.physb.2019.411968
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: ZnTe, Thin film, Optical properties, N-TYPE ZNTE, OPTICAL-PROPERTIES, STRUCTURAL-PROPERTIES, PHYSICAL-PROPERTIES, DOPED ZNTE, GROWTH, LAYERS, PHOTOCONDUCTIVITY, DEPENDENCE, DIFFUSION
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectronic devices. The usage of ZnTe in optoelectronic applications directs researchers to search its optical characteristics in great detail. For this purpose, structural and optical properties of magnetron sputtered ZnTe thin films were studied by means of x-ray diffraction and transmission spectroscopy measurements. Structural analyses indicated that ZnTe thin films having cubic crystalline structure were successfully grown on soda-lime glass substrates. Transmittance spectra in the 400-1000 nm were recorded in between 10 and 300 K temperature region. The analyses of absorption coefficient spectra resulted in band gap energies decreasing from around 2.31 (10 K) to 2.26 eV (300 K). Temperature dependency of gap energy was studied by Varshni and O'Donnell-Chen relations to determine various optical parameters like absolute zero temperature band gap energy, change of gap energy with temperature, phonon energy.