Composition dependence of lattice parameters and band gap energies of thallium based layered mixed crystals

HASANLI N.

INDIAN JOURNAL OF PHYSICS, cilt.89, sa.7, ss.657-661, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 89 Sayı: 7
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1007/s12648-014-0636-x
  • Dergi Adı: INDIAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.657-661
  • Anahtar Kelimeler: Optical band gap, Semiconductors, Layered crystals, X-ray diffraction, OPTICAL-PROPERTIES, ABSORPTION, TLINS2, TLGASE2, ELLIPSOMETRY, PRESSURE, TAIL
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Compositional dependence of lattice parameters and unit cell volumes of TlMeX2-type (Me = Ga or In and X = S or Se) layered mixed crystals with monoclinic structure has been studied by X-ray diffraction technique. It is revealed that the lattice parameters of TlGa1-xInxSe2, TlGa(S1-xSex)(2), TlGa1-xInxS2 and TlIn(Se1-xSx)(2) mixed crystals increase due to the substitution of gallium atoms by indium and sulfur atoms by selenium. Moreover, the absorption edges of these mixed crystals have been investigated through the transmission and reflection measurements in the wavelength range of 400-1,100 nm. The analysis of absorption data has revealed the presence of both optical indirect and direct transitions. It is found that the energy band gaps of mixed crystals decrease due to the substitution of gallium atoms by indium and of sulfur atoms by selenium.