The defect state of Yb-doped ZnO nanoparticles using thermoluminescence study


Hasanlı N. , İsik M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.100, pp.29-34, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 100
  • Publication Date: 2019
  • Doi Number: 10.1016/j.mssp.2019.04.030
  • Title of Journal : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Page Numbers: pp.29-34

Abstract

Shallow trapping centers in Yb-doped ZnO nanoparticles were determined using thermoluminescence (TL) measurements applied in the 10-300 K temperature region. Undoped and Yb-doped ZnO nanoparticles were synthesized by sol-gel method. TL glow curve of undoped nano-particles presented three peaks around 56, 108 and 150 K whereas one additional peak around 83 K was observed in the TL curve of Yb-doped ZnO nano-particles. The increase of Yb concentration in the nanoparticles increased the TL intensity of this additional peak. Activation energies of interstitial defect centers were found as 20, 82 and 105 meV while energy of trapping center existing due to Yb-doping was obtained as 72 meV using curve fitting and initial rise methods.