Trapping centers in undoped GaS layered single crystals


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Gasanly N. , Aydinli A., Yuksek N., Salihoglu O.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.77, ss.603-606, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 77
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1007/s00339-002-2035-y
  • Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
  • Sayfa Sayıları: ss.603-606

Özet

Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2x10(-21), 2.9x10(-23), 2.4x10(-21), 8.0x10(-9), 1.9x10(-9) and 4.3x10(-10) cm(2) for the capture cross sections and 1.6x10(13), 5.0x10(12), 7.3x10(12), 1.2x10(14), 8.9x10(13) and 2.6x10(13) cm(-3) for the concentrations, respectively.