Thermally stimulated currents in n-InS single crystals

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Gasanly N., Aydinli A., Yuksek N.

MATERIALS RESEARCH BULLETIN, vol.38, no.4, pp.699-704, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 4
  • Publication Date: 2003
  • Doi Number: 10.1016/s0025-5408(02)01051-6
  • Journal Name: MATERIALS RESEARCH BULLETIN
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.699-704
  • Keywords: semiconductors, chalcogenides, defects, electrical properties
  • Middle East Technical University Affiliated: Yes

Abstract

Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. (C) 2002 Elsevier Science Ltd. All rights reserved.