Thermally stimulated currents in n-InS single crystals

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Gasanly N., Aydinli A., Yuksek N.

MATERIALS RESEARCH BULLETIN, cilt.38, sa.4, ss.699-704, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 4
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0025-5408(02)01051-6
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.699-704
  • Anahtar Kelimeler: semiconductors, chalcogenides, defects, electrical properties
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. (C) 2002 Elsevier Science Ltd. All rights reserved.