Optoelectronic and electrical properties of TlGaS2 single crystal

Qasrawi A., Gasanly N.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.202, no.13, pp.2501-2507, 2005 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 202 Issue: 13
  • Publication Date: 2005
  • Doi Number: 10.1002/pssa.200521190
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.2501-2507


The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static refractive index of 2.50. The dark Hall coefficient measurements have shown that the crystals exhibit a conductivity type conversion from p-type to n-type at a critical temperature of 315 K. Deep donor and acceptor energy levels of 0.37/0.36 eV and 0.66 eV has been calculated from the temperature dependence of Hall coefficient and resistivity, and photocurrent measurements, respectively. The photocurrent decreases with decreasing temperature. The analysis of the photocurrent data have revealed that, the recombination mechanism is linear and supralinear above and below 290 K, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.