Trap levels in layered semiconductor Ga2SeS

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Aydinli A., Gasanly N. , Aytekin S.

SOLID STATE COMMUNICATIONS, vol.132, no.12, pp.857-861, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 132 Issue: 12
  • Publication Date: 2004
  • Doi Number: 10.1016/j.ssc.2004.08.028
  • Page Numbers: pp.857-861


Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga2SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7 x 10(-23), 1.8 x 10(-23) and 2.8 x 10(-22) cm(2) with concentrations of 1.3 x 10(12), 5.4 x 10(12) and 4.2 x 10(12) cm(-3), respectively. (C) 2004 Elsevier Ltd. All rights reserved.