Defect luminescence in some layered binary chalcogenide semiconductors
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, ss.61-69, 2002 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Basım Tarihi: 2002
- Doi Numarası: 10.4028/www.scientific.net/ddf.210-212.61
- Dergi Adı: DEFECTS AND DIFFUSION IN SEMICONDUCTORS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED)
- Sayfa Sayıları: ss.61-69
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications. In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.