Hall mobility and photoconductivity in TlGaSeS crystals

Qasrawi A. F. , Gasanly N.

JOURNAL OF APPLIED PHYSICS, vol.113, no.2, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 113 Issue: 2
  • Publication Date: 2013
  • Doi Number: 10.1063/1.4775577


In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm(-2), respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775577]