Temperature-dependent capacitance-voltage biasing of the highly tunable TlGaTe2 crystals


QASRAWI A. F. H. , Gasanly N.

PHYSICA B-CONDENSED MATTER, vol.407, no.14, pp.2749-2752, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 407 Issue: 14
  • Publication Date: 2012
  • Doi Number: 10.1016/j.physb.2012.04.020
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2749-2752
  • Middle East Technical University Affiliated: Yes

Abstract

The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.