Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals


IŞIK M., Gasanly N.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, cilt.70, ss.1048-1053, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 70 Konu: 6
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.jpcs.2009.05.021
  • Dergi Adı: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
  • Sayfa Sayıları: ss.1048-1053

Özet

Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl2Ga2Se3S layered single crystals in the temperature range of 10-260K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers. (C) 2009 Elsevier Ltd. All rights reserved.