Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

YILMAZ, ERCAN; Dogan, Ilker; TURAN, RAŞİT

doi:10.1016/j.nimb.2008.07.028

Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.266, sa.22, ss.4896-4898, 2008 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 266 Sayı: 22
Basım Tarihi: 2008
Doi Numarası: 10.1016/j.nimb.2008.07.028
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.4896-4898
Anahtar Kelimeler: MOS capacitor, MOS devices, Radiation effects, Radiation sensor, Dosimeters, Dielectrics, GATE OXIDE, IRRADIATION, CAPACITORS, RADFETS, TRANSISTORS, SILICON, DEVICES, DAMAGE, TRAPS
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response has been compared with conventional MOS capacitors with a SiO(2) dielectric. The study includes gamma radiation effects with dose up to 4 Gy. The effect of radiation has been determined from the valance band shift in CV curves. The amount of charge induced by the radiation has been calculated and compared with the response of MOS capacitors with SiO(2) with the same and different thicknesses. Fading properties have been studied and compared. Results show that MOS capacitors with Al(2)O(3) dielectric exhibit sensitivity greater than that obtained from MOS capacitors with SiO(2). This higher sensitivity is attributed to higher trapping efficiency in the Al(2)O(3) layer. (C) 2008 Elsevier B.V. All rights reserved.