YILMAZ, E. Et Al. 2008. Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.266, no.22 , 4896-4898.

YILMAZ, E., Dogan, I., & TURAN, R., (2008). Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.266, no.22, 4896-4898.

YILMAZ, ERCAN, Ilker Dogan, And RAŞİT TURAN. "Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate," NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.266, no.22, 4896-4898, 2008

YILMAZ, ERCAN Et Al. "Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.266, no.22, pp.4896-4898, 2008

YILMAZ, E. Dogan, I. And TURAN, R. (2008) . "Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.266, no.22, pp.4896-4898.

@article{article, author={ERCAN YILMAZ Et Al. }, title={Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, year=2008, pages={4896-4898} }