GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION


CHOI Y., BESIKCI C. , SUDHARSANAN R., RAZEGHI M.

APPLIED PHYSICS LETTERS, cilt.63, ss.361-363, 1993 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 63 Konu: 3
  • Basım Tarihi: 1993
  • Doi Numarası: 10.1063/1.110043
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Sayfa Sayıları: ss.361-363

Özet

We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455-degrees-C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1-xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.