CHOI, Y. Et Al. 1993. GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION. APPLIED PHYSICS LETTERS , vol.63, no.3 , 361-363.

CHOI, Y., BESIKCI, C., SUDHARSANAN, R., & RAZEGHI, M., (1993). GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION. APPLIED PHYSICS LETTERS , vol.63, no.3, 361-363.

CHOI, YH Et Al. "GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION," APPLIED PHYSICS LETTERS , vol.63, no.3, 361-363, 1993

CHOI, YH Et Al. "GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION." APPLIED PHYSICS LETTERS , vol.63, no.3, pp.361-363, 1993

CHOI, Y. Et Al. (1993) . "GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION." APPLIED PHYSICS LETTERS , vol.63, no.3, pp.361-363.

@article{article, author={YH CHOI Et Al. }, title={GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION}, journal={APPLIED PHYSICS LETTERS}, year=1993, pages={361-363} }