Growth of thick (11(2)over-bar0) GaN using a metal interlayer

Tavernier P., Imer B., DenBaars S., Clarke D.

APPLIED PHYSICS LETTERS, cilt.85, sa.20, ss.4630-4632, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Sayı: 20
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1063/1.1818736
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4630-4632
  • Orta Doğu Teknik Üniversitesi Adresli: Hayır

Özet

Thick films of (11 (2) over bar0)-oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 mum thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN nanomask suitable for lateral overgrowth during HVPE. An estimate of the void size required to allow spontaneous delamination of the substrate at the TiN-GaN interface is discussed with reference to growth conditions. (C) 2004 American Institute of Physics.