Tavernier, P. Et Al. 2004. Growth of thick (11(2)over-bar0) GaN using a metal interlayer. APPLIED PHYSICS LETTERS , vol.85, no.20 , 4630-4632.

Tavernier, P., Imer, B., DenBaars, S., & Clarke, D., (2004). Growth of thick (11(2)over-bar0) GaN using a metal interlayer. APPLIED PHYSICS LETTERS , vol.85, no.20, 4630-4632.

Tavernier, PR Et Al. "Growth of thick (11(2)over-bar0) GaN using a metal interlayer," APPLIED PHYSICS LETTERS , vol.85, no.20, 4630-4632, 2004

Tavernier, PR Et Al. "Growth of thick (11(2)over-bar0) GaN using a metal interlayer." APPLIED PHYSICS LETTERS , vol.85, no.20, pp.4630-4632, 2004

Tavernier, P. Et Al. (2004) . "Growth of thick (11(2)over-bar0) GaN using a metal interlayer." APPLIED PHYSICS LETTERS , vol.85, no.20, pp.4630-4632.

@article{article, author={PR Tavernier Et Al. }, title={Growth of thick (11(2)over-bar0) GaN using a metal interlayer}, journal={APPLIED PHYSICS LETTERS}, year=2004, pages={4630-4632} }