Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

ROSINSKI, MARCİN; BADZIAK, JAN; CZARNECKA, ANNA; GASİOR, PİETR; PARYS, PİETR; PISAREK, MARCİN; Turan, RAŞİT; WOLOWSKI, JERY; Yerci, SELÇUK

doi:10.1016/j.mssp.2006.08.051

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

ROSINSKI M., BADZIAK J., CZARNECKA A., GASİOR P., PARYS P., PISAREK M., ...Daha Fazla

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.9, ss.655-658, 2006 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 9
Basım Tarihi: 2006
Doi Numarası: 10.1016/j.mssp.2006.08.051
Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.655-658
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.