Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses


ROSINSKI M., BADZIAK J., CZARNECKA A., GASİOR P., PARYS P., PISAREK M., ...More

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.9, pp.655-658, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 9
  • Publication Date: 2006
  • Doi Number: 10.1016/j.mssp.2006.08.051
  • Title of Journal : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Page Numbers: pp.655-658

Abstract

Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.