Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

ROSINSKI, MARCİN; BADZIAK, JAN; CZARNECKA, ANNA; GASİOR, PİETR; PARYS, PİETR; PISAREK, MARCİN; Turan, RAŞİT; WOLOWSKI, JERY; Yerci, SELÇUK

doi:10.1016/j.mssp.2006.08.051

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

ROSINSKI M., BADZIAK J., CZARNECKA A., GASİOR P., PARYS P., PISAREK M., ...More

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.9, pp.655-658, 2006 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 9
Publication Date: 2006
Doi Number: 10.1016/j.mssp.2006.08.051
Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.655-658
Middle East Technical University Affiliated: Yes

Abstract

Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.