Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses


ROSINSKI M., BADZIAK J., CZARNECKA A., GASİOR P., PARYS P., PISAREK M., ...Daha Fazla

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.9, ss.655-658, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 9
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.mssp.2006.08.051
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Sayfa Sayıları: ss.655-658

Özet

Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.