ROSINSKI, M. Et Al. 2006. Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.9 , 655-658.

ROSINSKI, M., BADZIAK, J., CZARNECKA, A., GASİOR, P., PARYS, P., PISAREK, M., ... Turan, R.(2006). Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.9, 655-658.

ROSINSKI, MARCİN Et Al. "Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.9, 655-658, 2006

ROSINSKI, MARCİN Et Al. "Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.9, pp.655-658, 2006

ROSINSKI, M. Et Al. (2006) . "Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.9, pp.655-658.

@article{article, author={MARCİN ROSINSKI Et Al. }, title={Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2006, pages={655-658} }