A computer simulation of void dynamics under the action of electromigration and capillary forces in narrow thin interconnects


Ogurtani T., Oren E.

Advanced Metallization Conference (AMC), California, United States Of America, 2 - 25 October 2000, pp.483-487 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • City: California
  • Country: United States Of America
  • Page Numbers: pp.483-487

Abstract

In these studies a comprehensive picture of void dynamics in connection with the critical morphological evaluation has been thoroughly anticipated in order to understand main reasons as well as the conditions under which premature failure of metallic thin interconnects occur. Our mathematical model on diffusion and mass accumulation on void surfaces, under the action of applied electrostatic potential and capillary effects, follows a novel irreversible but discrete thermodynamic formulation of interphases and surfaces developed by the senior author in connection with the triple junction singularities as well as ordinary points along the interfaces.