Admittance analysis of an MIS structure made with PECVD deposited a-SiNx : H thin films


Atilgan I., Ozder S., Ozdemir O., Katircioglu B.

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol.249, pp.131-144, 1999 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 249
  • Publication Date: 1999
  • Doi Number: 10.1016/s0022-3093(99)00334-8
  • Journal Name: JOURNAL OF NON-CRYSTALLINE SOLIDS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.131-144

Abstract

a-SiNx:H thin films, prepared by the PECVD technique, were optically and electrically characterized. The frequency dependent trap admittance derived for the MIS structure in the accumulation gate voltage regime was revised. Based on these results an omitted multiplying factor was included into the derivation. An extension of the tunnelling model in the depletion bias regime was used in comparison with the widely accepted statistical model and finally, the more general feature of the tunnelling-based approaches was discussed. (C) 1999 Elsevier Science B.V. All rights reserved.