HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal

Yasar B., ERGUNT Y., KABUKCUOGLU M. P., PARLAK M., TURAN R., KALAY Y. E.

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.1, ss.778-784, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 47 Sayı: 1
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s11664-017-5836-7
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.778-784
  • Anahtar Kelimeler: CZT, single crystal growth, HRTEM simulation, X-RAY, GROWTH, CDTE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd-0.95 Zn-0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the aY211aY (c) direction were examined by transmission electron microscopy (TEM) and the corresponding HRTEM image simulations were performed by using a quantitative scanning TEM simulation package.