HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal
JOURNAL OF ELECTRONIC MATERIALS, cilt.47, sa.1, ss.778-784, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 47 Sayı: 1
- Basım Tarihi: 2018
- Doi Numarası: 10.1007/s11664-017-5836-7
- Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.778-784
- Anahtar Kelimeler: CZT, single crystal growth, HRTEM simulation, X-RAY, GROWTH, CDTE
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd-0.95 Zn-0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the aY