HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal

Yasar B., ERGUNT Y., KABUKCUOGLU M. P., PARLAK M., TURAN R., KALAY Y. E.

JOURNAL OF ELECTRONIC MATERIALS, vol.47, no.1, pp.778-784, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 47 Issue: 1
  • Publication Date: 2018
  • Doi Number: 10.1007/s11664-017-5836-7
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.778-784
  • Keywords: CZT, single crystal growth, HRTEM simulation, X-RAY, GROWTH, CDTE
  • Middle East Technical University Affiliated: Yes

Abstract

In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd-0.95 Zn-0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the aY211aY (c) direction were examined by transmission electron microscopy (TEM) and the corresponding HRTEM image simulations were performed by using a quantitative scanning TEM simulation package.