Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors

Dolas M. H., KOCAMAN S.

IEEE ELECTRON DEVICE LETTERS, vol.38, no.12, pp.1692-1695, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 12
  • Publication Date: 2017
  • Doi Number: 10.1109/led.2017.2763616
  • Journal Name: IEEE ELECTRON DEVICE LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1692-1695
  • Keywords: Fully depleted, heterojunction, InGaAs, in-device passivation, InP passivation, p-n diodes, SWIR, LOW DARK-CURRENT, N PHOTODIODE
  • Middle East Technical University Affiliated: Yes

Abstract

We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.