Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors


Dolas M. H. , KOCAMAN S.

IEEE ELECTRON DEVICE LETTERS, vol.38, no.12, pp.1692-1695, 2017 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 12
  • Publication Date: 2017
  • Doi Number: 10.1109/led.2017.2763616
  • Title of Journal : IEEE ELECTRON DEVICE LETTERS
  • Page Numbers: pp.1692-1695

Abstract

We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.