Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors

Dolas M. H., KOCAMAN S.

IEEE ELECTRON DEVICE LETTERS, cilt.38, sa.12, ss.1692-1695, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 12
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1109/led.2017.2763616
  • Dergi Adı: IEEE ELECTRON DEVICE LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1692-1695
  • Anahtar Kelimeler: Fully depleted, heterojunction, InGaAs, in-device passivation, InP passivation, p-n diodes, SWIR, LOW DARK-CURRENT, N PHOTODIODE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.