Dolas, M. H. And KOCAMAN, S. 2017. Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors. IEEE ELECTRON DEVICE LETTERS , vol.38, no.12 , 1692-1695.

Dolas, M. H., & KOCAMAN, S., (2017). Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors. IEEE ELECTRON DEVICE LETTERS , vol.38, no.12, 1692-1695.

Dolas, M., And SERDAR KOCAMAN. "Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors," IEEE ELECTRON DEVICE LETTERS , vol.38, no.12, 1692-1695, 2017

Dolas, M. H. And KOCAMAN, SERDAR. "Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors." IEEE ELECTRON DEVICE LETTERS , vol.38, no.12, pp.1692-1695, 2017

Dolas, M. H. And KOCAMAN, S. (2017) . "Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors." IEEE ELECTRON DEVICE LETTERS , vol.38, no.12, pp.1692-1695.

@article{article, author={M. Halit Dolas And author={SERDAR KOCAMAN}, title={Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors}, journal={IEEE ELECTRON DEVICE LETTERS}, year=2017, pages={1692-1695} }