Comparison of Two Alternative Fabrication Processes for a Three-Axis Capacitive MEMS Accelerometer

Tez S., Akin T.

26th European Conference on Solid-State Transducers (Eurosensors), Krakow, Polonya, 9 - 12 Eylül 2012, cilt.47, ss.342-345 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 47
  • Doi Numarası: 10.1016/j.proeng.2012.09.153
  • Basıldığı Şehir: Krakow
  • Basıldığı Ülke: Polonya
  • Sayfa Sayıları: ss.342-345
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

This paper presents a three-axis capacitive MEMS accelerometer implemented by fabricating lateral and vertical accelerometers in a same die with two alternative processes: a double glass modified dissolved wafer (DGM-DWP) and a double glass modified silicon-on-glass (DGM-SOG) processes. The accelerometers are implemented with a 35 mu m structural layer, and the three-axis accelerometer die measures 12mmx7mmx1mm in each process. Each process includes a second glass wafer which, not only allows implementing a top electrode for the vertical accelerometer, but also forms an inherent cap for the entire structure. Thanks to the stress-free structural layer coming from the SOI wafer, the DGM-SOG process allows obtaining the same rest capacitance values in each side of the accelerometer, which is one of the most important challenges for a functional high performance operation. (C) 2012 Elsevier Ltd....Selection and/or peer-review under responsibility of the Symposium Cracoviense Sp. z.o.o.