Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C

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AKRAM R., Dede M., Oral A.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol.27, no.2, pp.1006-1010, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 27 Issue: 2
  • Publication Date: 2009
  • Doi Number: 10.1116/1.3056172
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1006-1010
  • Middle East Technical University Affiliated: No


The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1 x 1 mu m(2). Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 m Omega/G, 6.3 x 10(12) cm(-2), and 12 k Omega at 25 degrees C and 7 m Omega/G, 8.9 x 10(12) cm(-2) and 24 k Omega at 125 degrees C for AlGaN/GaN two-dimensional electron gas (2DEG), 0.281 m Omega/G, 2.2 x 10(14) cm(-2), and 139 k Omega at 25 degrees C and 0.418 m Omega/G, 1.5 x 10(14) cm(-2) and 155 k Omega at 100 degrees C for Si and 5-10 m Omega/G, 6.25 x 10(12) cm(-2), and 12 k Omega at 25 degrees C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 degrees C for PHEMT, Si, and AlGaN/GaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3056172]