R. AKRAM Et Al. , "Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2, pp.1006-1010, 2009
AKRAM, R. Et Al. 2009. Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2 , 1006-1010.
AKRAM, R., Dede, M., & Oral, A., (2009). Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2, 1006-1010.
AKRAM, R, M. Dede, And AHMET ORAL. "Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C," JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2, 1006-1010, 2009
AKRAM, R Et Al. "Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2, pp.1006-1010, 2009
AKRAM, R. Dede, M. And Oral, A. (2009) . "Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B , vol.27, no.2, pp.1006-1010.
@article{article, author={R AKRAM Et Al. }, title={Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, year=2009, pages={1006-1010} }