Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials


Wolowski J., Badziak J., Czarnecka A., Parys P., Pisarek M., Rosinski M., ...Daha Fazla

RADIATION EFFECTS AND DEFECTS IN SOLIDS, cilt.163, ss.589-595, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 163
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1080/10420150701781076
  • Dergi Adı: RADIATION EFFECTS AND DEFECTS IN SOLIDS
  • Sayfa Sayıları: ss.589-595

Özet

This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP 'SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mu m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of 'time-of-flight' ion diagnostics simultaneously with other diagnostic methods in dependence on laser pulse parameters, illumination geometry and target material. The properties of laser-implanted and modified SiO(2) layers on sample surface were characterised with the use of different methods (XPS+ASD, Raman spectroscopy, PL spectroscopy) at the Middle East Technological University in Ankara and at the Warsaw University of Technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.