50 nm Hall sensors for room temperature scanning Hall probe microscopy


SANDHU A., KUROSAWA K., DEDE M., Oral A.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, cilt.43, ss.777-778, 2004 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 43 Konu: 2
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1143/jjap.43.777
  • Dergi Adı: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • Sayfa Sayısı: ss.777-778

Özet

Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.