50 nm Hall sensors for room temperature scanning Hall probe microscopy


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SANDHU A., KUROSAWA K., DEDE M., Oral A.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol.43, no.2, pp.777-778, 2004 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 43 Issue: 2
  • Publication Date: 2004
  • Doi Number: 10.1143/jjap.43.777
  • Journal Name: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.777-778
  • Keywords: scanning Hall probe microscopy, nanomagnetics, Hall sensors, magnetic domains, GARNET-FILMS

Abstract

Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.