Fabrication and Feasibility of Through Silicon Via for 3D MEMS Resonator Integration

Soydan A. K., Yüksel M. B., Işık Akçakaya D., KÜLAH H.

18th IEEE Sensors Conference, Montreal, Canada, 27 - 30 October 2019 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/sensors43011.2019.8956828
  • City: Montreal
  • Country: Canada
  • Keywords: through silicon via, electroplating, MEMS resonator, Kelvin measurement, cochlear implant
  • Middle East Technical University Affiliated: Yes


In this study, development of a wafer level, void free TSV fabrication process flow and feasibility study of TSV integration to MEMS piezoelectric resonator devices have been presented. TSV structures with 100 mu m diameter and 350 mu m depth were copper filled with via sealing and bottom-up electroplating process which is a two-step technique. Four-point Kelvin measurements showed 0.8 m Omega TSV resistance on fabricated TSVs. Furthermore, TSV frames were epoxy bonded to MEMS acoustic transducers, which showed 90% to the resonator signal from the TSV.