Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films

Anutgan M., Anutgan T. A., Ozkol E., Atilgan I., Katircioglu B.

JOURNAL OF NON-CRYSTALLINE SOLIDS, vol.355, pp.1622-1629, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 355
  • Publication Date: 2009
  • Doi Number: 10.1016/j.jnoncrysol.2009.05.053
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1622-1629
  • Keywords: Amorphous semiconductors, III-V semiconductors, Composition, Optical properties, Absorption, Optical spectroscopy, FTIR measurements, Infrared properties, Medium-range order, XPS, CHEMICAL-VAPOR-DEPOSITION, FIELD-EMISSION CHARACTERISTICS, OXYGEN PLASMA TREATMENT, OPTICAL-PROPERTIES, XPS, HYDROGEN, GROWTH, LAYER, CVD
  • Middle East Technical University Affiliated: Yes


Three sets of boron nitride (BN) thin films are deposited with different N(2)/B(2)H(6) flow ratios (r = 4, 10 and 25) by plasma enhanced chemical vapor deposition (PECVD). The variations of physical properties in different deposition sets are analyzed by optical (XPS, FTIR, UV-visible spectroscopies), mechanical and electrical measurements. The films are considered to be deposited in a turbostratic phase (t-BN). Evolution of bonding configurations with increasing r is discussed. Relatively higher nitrogen flow rate in the source gas mixture results in lower deposition rates, whereas more ordered films, which tend to reach a unique virtual crystal of band gap 5.93 eV, are formed. Anisotropy in the film structure and film inhomogeneity along the PECVD electrode radial direction are investigated. (C) 2009 Elsevier B.V. All rights reserved.