A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO | AVESİS

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A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO

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İMER M. B., WU F., SPECK J. S., DENBAARS S. P.

6th International Conference on Nitride Semiconductors (ICNS), Bremen, Germany, 29 August - 02 September 2005

Publication Type: Conference Paper / Summary Text
City: Bremen
Country: Germany
Middle East Technical University Affiliated: No