İMER, M. B. Et Al. 2005. A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO. 6th International Conference on Nitride Semiconductors (ICNS) , (Bremen, Germany).

İMER, M. B., WU, F., SPECK, J. S., & DENBAARS, S. P., (2005). A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO . 6th International Conference on Nitride Semiconductors (ICNS), Bremen, Germany

İMER, MUHSİNE Et Al. "A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO," 6th International Conference on Nitride Semiconductors (ICNS), Bremen, Germany, 2005

İMER, MUHSİNE B. Et Al. "A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO." 6th International Conference on Nitride Semiconductors (ICNS) , Bremen, Germany, 2005

İMER, M. B. Et Al. (2005) . "A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO." 6th International Conference on Nitride Semiconductors (ICNS) , Bremen, Germany.

@conferencepaper{conferencepaper, author={MUHSİNE BİLGE İMER Et Al. }, title={A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO}, congress name={6th International Conference on Nitride Semiconductors (ICNS)}, city={Bremen}, country={Germany}, year={2005}}