Investigation of electromigration and stress induced surface dynamics on the interconnect by computer simulation


Tezin Türü: Doktora

Tezin Yürütüldüğü Kurum: Orta Doğu Teknik Üniversitesi, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümü, Türkiye

Tezin Onay Tarihi: 2011

Öğrenci: AYTAÇ ÇELİK

Danışman: MEHMET KADRİ AYDINOL

Özet:

Purpose of this work is to provide a comprehensive picture of thin film (interconnect) and solid droplet surface evolution under the several external applied forces with anisotropic physical properties so that one can eventually be able to predict main reasons and conditions under which stability of surface is defined. A systematic study based on the self-consistent dynamical simulations is presented for the spontaneous surface evolution of an thin film and isolated thin solid droplet on a rigid substrate, which is driven by the surface drift diffusion induced by the anisotropic diffusivity, the anisotropic capillary forces (surface stiffness) and mismatch stresses under electron winding. The effect of surface free energy anisotropies (weak and strong (anomalous)) on the development kinetics of the Stranski-Krastanow island type morphology are studied. Although, various tilt angles and anisotropy constants were considered during simulations, the main emphasis was given on the effect of rotational symmetries associated with the surface Helmholtz free energy topography in 2D space. The investigations of dynamics of surface roughness on concurrent actions of the appliedelasto- and electro- static fields clearly indicate that applied misfit stress level is highly important effect on resultant surface form which may be smooth wave like or crack like. The droplet simulations revealed the formation of an extremely thin wetting layer during the development of the bell-shaped Stranski-Krastanow island through the mass accumulation at the central region of the droplet via surface drift-diffusion. The developments in the peak height, in the extension of in the wetting layer beyond the domain boundaries, and the change in triple junction contact angle, one clearly observes that these quantities are reaching certain saturation limits or plateaus, when the growth mode turned-off. Islanding differences for weak anisotropy constant levels and the strong (anomalous) anisotropy constant domains are discussed.