Akademik Veri Yönetim Sistemi
Tezin Türü: Yüksek Lisans
Tezin Yürütüldüğü Kurum: Orta Doğu Teknik Üniversitesi, Mühendislik Fakültesi, Makina Mühendisliği Bölümü, Türkiye
Tezin Onay Tarihi: 2011
Öğrenci: MUSTAFA MERT TORUNBALCI
Eş Danışman: TAYFUN AKIN, MEHMET ALİ SAHİR ARIKAN
Özet:This thesis presents the development of wafer level vacuum packaging processes using Au-Si eutectic and glass frit bonding contributing to the improvement of packaging concepts for a variety of MEMS devices. In the first phase of this research, micromachined resonators and pirani vacuum gauges are designed for the evaluation of the vacuum package performance. These designs are verified using MATLAB and Coventorware finite element modeling tool. Designed resonators and pirani vacuum gauges and previously developed gyroscopes with lateral feedthroughs are fabricated with a newly developed Silicon-On-Glass (SOG) process. In addition to these, a process for the fabrication of similar devices with vertical feedthroughs is initiated for achieving simplified packaging process and lower parasitic capacitances. Cap wafers for both types of devices with lateral and vertical feedthroughs are designed and fabricated. The optimization of Au-Si eutectic bonding is carried out on both planar and non-planar surfaces. The bonding quality is evaluated using the deflection test, which is based on the deflection of a thinned diaphragm due to the pressure difference between inside and outside the package. A 100% yield bonding on planar surfaces is achieved at 390ºC with a v holding time and bond force of 60 min and 1500 N, respectively. On the other hand, bonding on surfaces where 0.15μm feedthrough lines exist can be done at 420ºC with a 100% yield using same holding time and bond force. Furthermore, glass frit bonding on glass wafers with lateral feedthroughs is performed at temperatures between 435-450ºC using different holding periods and bond forces. The yield is varied from %33 to %99.4 depending on the process parameters. The fabricated devices are wafer level vacuum packaged using the optimized glass frit and Au-Si eutectic bonding recipes. The performances of wafer level packages are evaluated using the integrated gyroscopes, resonators, and pirani vacuum gauges. Pressures ranging from 10 mTorr to 60 mTorr and 0.1 Torr to 0.7 Torr are observed in the glass frit packages, satisfying the requirements of various MEMS devices in the literature. It is also optically verified that Au-Si eutectic packages result in vacuum cavities, and further study is needed to quantify the vacuum level with vacuum sensors based on the resonating structures and pirani vacuum gauges.