Akademik Veri Yönetim Sistemi
Tezin Türü: Doktora
Tezin Yürütüldüğü Kurum: Orta Doğu Teknik Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, Türkiye
Tezin Onay Tarihi: 2011
Tezin Dili: İngilizce
Öğrenci: İpek Güler
Danışman: NIZAMI HASANLI
Özet:In this thesis, in order to study the structural, optical and electrical transport properties of Tl2In2S3Se, TlInSeS and Tl2In2SSe3 crystals, X-ray diffraction (XRD), energy dispersive spectroscopic analysis (EDSA), transmission, reflection, photoluminescence (PL), thermally stimulated current (TSC) and photoconductivity decay (PC) measurements were carried out. Lattice parameters and atomic composition of these crystals were determined from XRD and EDSA experiments, respectively. By the help of transmission and reflection experiments, the room temperature absorption data were analyzed and it was revealed the coexistence of indirect and direct band gap energies of the studied crystals. Moreover, the refractive index dispersion parameters - oscillator energies, dispersion energies, oscillator strengths, oscillator wavelengths and zero-frequency refractive indexes were determined. Temperature-dependent transmission measurements made it possible to find the rate of change of indirect band gaps with temperature, absolute zero values of the band gap energies and Debye temperatures of these crystals. From the analysis of the transmission and reflection measurements, it was established that, there is a decrease in the values of indirect and direct band gaps energies and an increase in zero-frequency refractive indexes with increasing of selenium content. PL measurements were carried out to obtain the detailed information about recombination levels in crystals studied. The behavior of PL spectra were investigated as a function of laser excitation intensity and temperature. The variation of the spectra with laser excitation intensity and temperature suggested that the observed emission bands in these crystals were due to the donor-acceptor pair recombination. TSC measurements were carried out with various heating rates at different illumination temperatures to obtain information about trap levels in these crystals. The mean activation energies, attempt-to-escape frequencies, concentrations and capture cross sections of the traps were determined as a result of TSC spectra analysis. The analysis of experimental TSC curves registered at different light illumination temperatures revealed the exponential trap distribution in the studied crystals. From the analysis of PC measurements, carrier lifetimes were obtained.