InSb and InAsSb infrared photodiodes on alternative substrates and InP/InGaAs quantum well infrared photodetectors: Pixel and focal plane array performance

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Tezin Türü: Doktora

Tezin Yürütüldüğü Kurum: Orta Doğu Teknik Üniversitesi, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü, Türkiye

Tezin Onay Tarihi: 2005

Öğrenci: SELÇUK ÖZER

Danışman: CENGİZ BEŞİKCİ

Özet:

InAsxSb1-x (Indium Arsenide Antimonide) is an important low bandgap semiconductor whose high quality growth on GaAs or Si substrates is indispensible for low cost, large format infrared focal plane arrays (FPAs). Quantum well infrared photodetector (QWIP) technology, relying on mature semiconductors, is also promising for the above purpose. While AlGaAs/GaAs has been the standard material system for QWIPs, the search for alternative materials is needed for better performance. This thesis reports a detailed investigation of molecular beam epitaxy grown mid-wavelength infrared InAsxSb1-x photodiodes on alternative substrates, and long wavelength infrared InP/InGaAs QWIPs. In the first part of the study, InSb and InAs0.8Sb0.2 photodiodes grown on Si and GaAs substrates are investigated to reveal the performance degrading mechanisms due to large lattice mismatch. InAs0.8Sb0.2/GaAs photodiodes yield peak detectivities of 1.4₉1010 and 7.5₉108 cmHzư/W at 77 K and 240 K, respectively, showing that the alloy is promising for both cooled and near room temperature detectors. Under moderate reverse bias, 80 K RoA product limiting mechanism is trap assisted tunneling, which introduces considerable 1/f noise. InSb/Si photodiodes display peak 77 K detectivity as high as ~1₉1010 cmHz 1/2/W and reasonably high peak quantum efficiency in spite of large lattice mismatch. RoA product of detectors at 80 K is limited by Ohmic leakage with small activation energy (25 meV). Bias and temperature dependence of 1/f noise is in reasonable agreement with Kleinpenning̕s mobility fluctuation model, confirming the validity of this approach. The second part of the study concentrates on InP/In0.53Ga0.47As QWIPs, and 640₉512 FPA, which to our knowledge, is the largest format InP/InGaAs QWIP FPA reported. InP/InGaAs QWIPs yield quantum efficiency-gain product as high as 0.46 under moderate bias. At 70