Indium antimonide infrared p-i-n photodetectors grown on galium arsenide coated silicon substrates by molecular beam epitaxy

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Thesis Type: Postgraduate

Institution Of The Thesis: Middle East Technical University, Faculty of Engineering, Department of Electrical and Electronics Engineering, Turkey

Approval Date: 1999

Thesis Language: English

Student: Ahmet Tevke

Supervisor: CENGİZ BEŞİKCİ