Simulation of TOPCoRE Solar Cells: Impact of Boron Doping Parameters of P+ Layer Localized Under Front Side Metal Contacts on Cell Performance
Silicon, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s12633-026-03717-0
- Dergi Adı: Silicon
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC, Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Anahtar Kelimeler: Boron doping, Peak concentration, Profile depth, Quokka3, TOPCoRE
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
This work elaborates on the modeling properties of a Tunnel Oxide Passivated Contact with Rear Emitter (TOPCoRE) solar cells on p-type silicon focusing on the influence of boron-doped hole-selective layers localized under the front side metal contact. Using the numerical simulation tool Quokka3, the boron peak doping concentration (Npeak) and the diffusion profile depth were systematically varied within ranges of 1019–1020 cm−3 and 0.1–0.8 µm, respectively, to quantify their impact on device performance. The simulations identified an optimal Npeak of 1·1020 cm−3 and a profile depth of 0.3 µm, yielding an open-circuit voltage (Voc) of 735.8 mV, a short-circuit current density (Jsc) of 42.19 mA/cm2, a fill factor (FF) of 83.97%, and a resulting power-conversion efficiency (η) of 26.07%. Additional analysis across a wide range of surface recombination velocities (SRV) reveals how doping-induced selectivity and recombination trade-offs govern the achievable performance. A data mining approach further confirms the dominant correlation between doping parameters, SRV, and key performance indicators. These results establish quantitative design rules for optimizing localized hole-selective layers in front-contacted TOPCoRE architectures.