Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors

ÇIRÇIR K., KOCAMAN S.

Quantum Sensing and Nano Electronics and Photonics XIX 2023, California, Amerika Birleşik Devletleri, 29 Ocak - 02 Şubat 2023, cilt.12430 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 12430
  • Doi Numarası: 10.1117/12.2651070
  • Basıldığı Şehir: California
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Anahtar Kelimeler: crosstalk suppression, dark current reduction, in-device passivation, InGaAs/InP photodetectors, mesa type, Short wavelength infrared
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Mesa-based depleted passivation InGaAs photodetectors have a lower dark current than classical mesa type photodetectors due to in-device passivation. However, the in-device passivation layer's depleted state induces electrical crosstalk. High electric field distribution between the pixels originating from the depleted state is the main reason for increased electrical crosstalk. An additional thin crosstalk-block layer in the modified depleted passivation InGaAs photodetectors manipulates this electric field distribution between the pixels and improves inter-pixel crosstalk while dark current suppression is preserved.