Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy


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Altan H., Huang F., Federici J., Lan A., Grebel H.

JOURNAL OF APPLIED PHYSICS, vol.96, no.11, pp.6685-6689, 2004 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 96 Issue: 11
  • Publication Date: 2004
  • Doi Number: 10.1063/1.1805720
  • Journal Name: JOURNAL OF APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.6685-6689

Abstract

We have conducted visible pump-THz (THz-terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed. (C) 2004 American Institute of Physics.