Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

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Altan H., Huang F., Federici J., Lan A., Grebel H.

JOURNAL OF APPLIED PHYSICS, cilt.96, sa.11, ss.6685-6689, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 96 Sayı: 11
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1063/1.1805720
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.6685-6689
  • Orta Doğu Teknik Üniversitesi Adresli: Hayır

Özet

We have conducted visible pump-THz (THz-terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed. (C) 2004 American Institute of Physics.