Magnetic-Field-Based Switching Stage Detection for Closed-Loop Active Gate Driving to Suppress Overshoot and Oscillatory Switching Behaviour in SiC Power Modules

Bai Y., Parker M., ŞAHİN İ., Neira S., Judge P. D., Finney S.

2026 International Power Electronics Conference, IPEC-Nagasaki 2026 - ECCE Asia, Nagasaki, Japonya, 31 Mayıs - 04 Haziran 2026, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.23919/ipec-nagasaki2026-ec64663.2026.11597284
  • Basıldığı Şehir: Nagasaki
  • Basıldığı Ülke: Japonya
  • Anahtar Kelimeler: active gate driver, EMI, radiated emissions, SiC MOSFETs
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Silicon Carbide (SiC) MOSFETs offer significantly lower switching losses than Silicon IGBTs owing to their faster switching speeds. However, these high switching speeds also introduce challenges such as drain-source voltage (VDS) and drain current (ID) overshoots and oscillations, as well as increased radiated emissions. Active Gate Drivers (AGDs) have been proposed to improve switching performance by dynamically adjusting drive parameters such as gate current, gate voltage, and gate resistance. However, implementing real-time active gate control remains challenging, particularly under varying load conditions and the nanosecond-level timing requirements of gate-driving modulation. This paper presents a closed-loop active gate driver that employs magnetic-field (H-field) sensing for switching stage detection and real-time in-cycle control based on single-pulse gate-voltage modulation. Validated on a 1200 V, 400 A SiC MOSFET module, the proposed stage-detection AGD suppresses overshoot, oscillations, and radiated emissions during switching transients, at the cost of a moderate increase in switching loss relative to conventional gate driving (CGD). Nevertheless, compared with the conventional EMI mitigation approach of increasing gate resistance, the proposed AGD achieves a similar reduction in radiated emissions with significantly lower switching loss, thereby offering a more favorable trade-off between EMI suppression and efficiency.