DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

KATIRCIOGLU S., ERKOC S.

SURFACE SCIENCE, vol.311, 1994 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Letter
  • Volume: 311
  • Publication Date: 1994
  • Doi Number: 10.1016/0039-6028(94)90473-1
  • Journal Name: SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Middle East Technical University Affiliated: Yes

Abstract

The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.