DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

KATIRCIOGLU S., ERKOC S.

SURFACE SCIENCE, cilt.311, 1994 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Kısa Makale
  • Cilt numarası: 311
  • Basım Tarihi: 1994
  • Doi Numarası: 10.1016/0039-6028(94)90473-1
  • Dergi Adı: SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.