DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE


KATIRCIOGLU S. , ERKOC S.

SURFACE SCIENCE, cilt.311, 1994 (SCI İndekslerine Giren Dergi) identifier identifier

Özet

The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.