Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation
THIN SOLID FILMS, cilt.694, 2020 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 694
- Basım Tarihi: 2020
- Doi Numarası: 10.1016/j.tsf.2019.137639
- Dergi Adı: THIN SOLID FILMS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
- Anahtar Kelimeler: Non-hydrogenated amorphous silicon, Polysilicon, In-situ boron doping, Thin films, Solid-phase crystallization, Electron beam evaporation, Effusion cell, Raman spectroscopy, Time-of-flight secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, FRACTION, CRYSTAL, GLASS
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing incidence X-ray diffraction, Hall Effect measurement and X-ray photoelectron spectroscopy (XPS) to understand the structural and electrical variations with regard to B doping and process conditions. We found that the stress in the poly-Si thin film increases when the B concentration increases from 10(18) to 10(20) atoms/cm(3), reaching a value of to 1087.5 MPa. We also studied the chemical environment around the B atoms by comparing the B-1s, binding energies in XPS measurements, which revealed that B-Si coordination does not change upon crystallization. The electrical effect of boron doping was observed in a drastic drop in resistivity from orders of 10(2) to the 10(-3) Omega.cm. Moreover, we found that an increase in boron doping concentration leads to a higher crystallization rate of non-hydrogenated amorphous silicon thin films prepared by e-Beam EC.