Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique

ÇOLAKOĞLU T., PARLAK M., ÖZDER S.

JOURNAL OF NON-CRYSTALLINE SOLIDS, cilt.354, sa.30, ss.3630-3636, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 354 Sayı: 30
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.jnoncrysol.2008.03.014
  • Dergi Adı: JOURNAL OF NON-CRYSTALLINE SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3630-3636
  • Anahtar Kelimeler: thin films, ternary semiconductor, refractive index, dielectric constant, optical properties, absorption, CONTINUOUS WAVELET TRANSFORM, PHOTOCURRENT SPECTROSCOPY, PHYSICAL-PROPERTIES, AMORPHOUS-SILICON, CONSTANTS, ABSORPTION, DISPERSION, THICKNESS, AGGASE2
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The optical properties of the Ag-In-Se (AlS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10(3) to 10(5) cm(-1) over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 degrees C were evaluated by means of both envelope method (EM) and continuous wavelet transform (CWT) method and the results were in quite good agreement with each other. The refractive index, n, dispersion over the measured wavelength range was explained by applying single-oscillator model (SOM) and the related parameters were calculated. The optical absorption process for the AIS thin films was characterized by three direct transitions from three closely spaced valence bands to a single conduction band due to the splitting of the valence band under the influence of the tetragonal crystalline field and spin-orbit interaction. The direct optical band gap energy decreases as the annealing temperature increases because of the increase in the width of band tail states near valence-band edge caused by the Se segregation. The two distinct parameters of the quasicubic model; crystal-field splitting Delta(CF), and spin-orbit splitting, Delta(SO), were calculated for as-grown and annealed AlS thin films. (C) 2008 Elsevier B.V. All rights reserved.